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PE5C6JZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
24V 5.5mΩ @VGS = 4.5V
ID 54A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 24
Gate-Source Voltage
VGS ±12
TC = 25 °C
54
Continuous Drain Current2
TC = 100 °C TA = 25 °C
ID
34 16
Pulsed Drain Current1
TA= 70 °C
IDM
13 90
Avalanche Current
IAS 28
Avalanche Energy
L =0.1mH
EAS
39
TC = 25 °C
27
Power Dissipation
TC = 100 °C TA = 25 °C
PD
11 2.5
TA = 70 °C
1.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
50
Junction-to-Case
RqJC
4.
PE5C6JZ Datasheet
