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PE5C6JZ Datasheet Preview

PE5C6JZ Datasheet

Dual N-Channel Enhancement Mode MOSFET

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PE5C6JZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
24V 5.5mΩ @VGS = 4.5V
ID
54A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 24
Gate-Source Voltage
VGS ±12
TC = 25 °C
54
Continuous Drain Current2
TC = 100 °C
TA = 25 °C
ID
34
16
Pulsed Drain Current1
TA= 70 °C
IDM
13
90
Avalanche Current
IAS 28
Avalanche Energy
L =0.1mH
EAS
39
TC = 25 °C
27
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
11
2.5
TA = 70 °C
1.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
50
Junction-to-Case
RqJC
4.5
1Pulse width limited by maximum junction temperature.
2Package limitation current is 13A.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2016/7/20




UNIKC

PE5C6JZ Datasheet Preview

PE5C6JZ Datasheet

Dual N-Channel Enhancement Mode MOSFET

No Preview Available !

PE5C6JZ
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
24
V
VDS = VGS, ID = 250mA
0.6 0.9 1.2
VDS = 0V, VGS = ±10V
±10 uA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
1
mA
10
VGS = 4.5V, ID = 3A
3.6 4.6 5.5
VGS = 3.8V, ID = 3A
VGS = 3.1V, ID = 3A
3.9 4.9 6
4.3 5.3 6.9
VGS = 2.5V, ID = 3A
5 6 8.5
VDS = 5V, ID = 3A
24 S
DYNAMIC
Input Capacitance
Ciss
1774
Output Capacitance
Coss
VGS = 0V, VDS = 12V, f = 1MHz
327
pF
Reverse Transfer Capacitance
Crss
267
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz 1.8 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=4.5V)
Qg(VGS=3.9V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 12V , ID = 3A
VDD= 12V,
ID @ 3A, VGEN = 4.5V, RG= 6Ω
24
21.4 nC
2.2
9
20
38
nS
70
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
22 A
Forward Voltage1
VSD IF = 3A, VGS = 0V
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 3A, dlF/dt = 100A / mS
28 nS
13 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 13A.
REV 1.0
2 2016/7/20


Part Number PE5C6JZ
Description Dual N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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