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PE5A1BA Datasheet Preview

PE5A1BA Datasheet

P-Channel Enhancement Mode MOSFET

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PE5A1BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
6.5mΩ @VGS = -4.5V
ID
-43A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -20
VGS ±8
TC = 25 °C
-43
Continuous Drain Current4
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
-27
-18
-14
-50
-39
Avalanche Energy
L = 0.1mH
EAS
76
TC = 25 °C
20
Power Dissipation3
Junction & Storage Temperature Range
TC = 100 °C
TA = 25 °C
TA = 70 °C
PD
TJ, TSTG
8
3.5
2.2
-55 to 150
UNITS
V
A
mJ
W
°C
REV1.1
1 2015/10/14




UNIKC

PE5A1BA Datasheet Preview

PE5A1BA Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

PE5A1BA
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
35
60
Junction-to-Case
Steady-State
RqJC
6
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air
environment with TA = 25°C.
3The Power dissipation is based on RqJA t 10s value.
4Package limitation current is 36A.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±8V
VDS = -16V, VGS = 0V
VDS = -10V, VGS = 0V , TJ = 55 °C
VGS = -4.5V, ID = -3.5A
VGS = -2.5V, ID = -3.5A
VGS = -1.8V, ID = -2A
VDS = -10V, ID = -3.5A
DYNAMIC
-20
-0.45 -0.6
4.9
6
7.6
47
-0.9
±100
-1
-10
6.5
8
11
V
nA
mA
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS=-4.5V)
Qg(VGS=-2.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -10V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -10V, ID = -3.5A
VDD = -10V,
ID @ -3.5A, VGS = -4.5V, RGEN = 6Ω
5926
551
424
4
64
38
6.7
12.7
35
53
190
109
pF
Ω
nC
nS
REV1.1
2 2015/10/14


Part Number PE5A1BA
Description P-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 9 Pages
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