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PE5A1BA - MOSFET

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Datasheet Details

Part number PE5A1BA
Manufacturer UNIKC
File Size 843.06 KB
Description MOSFET
Datasheet download datasheet PE5A1BA Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE5A1BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 6.5mΩ @VGS = -4.5V ID -43A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±8 TC = 25 °C -43 Continuous Drain Current4 Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA = 70 °C ID IDM IAS -27 -18 -14 -50 -39 Avalanche Energy L = 0.1mH EAS 76 TC = 25 °C 20 Power Dissipation3 Junction & Storage Temperature Range TC = 100 °C TA = 25 °C TA = 70 °C PD TJ, TSTG 8 3.5 2.2 -55 to 150 UNITS V A mJ W °C REV1.
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