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PE597BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
35mΩ @VGS = -4.5V
ID -17A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS -20 VGS ±12
TC = 25 °C
-17
Continuous Drain Current4
Pulsed Drain Current1 Avalanche Current
TC = 100 °C TA = 25 °C TA = 70 °C
ID
IDM IAS
-11 -7 -6 -28 -14
Avalanche Energy
L = 0.1mH
EAS
10
TC = 25 °C
16
Power Dissipation3 Junction & Storage Temperature Range
TC = 100 °C TA = 25 °C TA = 70 °C
PD TJ, TSTG
6 3 2 -55 to 150
UNITS V
A
mJ W °C
REV1.
PE597BA Datasheet
