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PB5G2JU
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
20V
9.5mΩ @VGS = 4.5V
12A
TDFN 2X3-6
1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±10
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA= 70 °C
ID
12 9.4
IDM
42
Avalanche Current
IAS
23
Avalanche Energy3
EAS
26
Power Dissipation
TA= 25 °C TA= 70°C
PD
2.4 1.5
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
52
1Pulse width limited by maximum junction temperature.
PB5G2JU Datasheet
