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PB5G8JW - Dual N-Channel Enhancement Mode Field Effect Transistor

Product Overview

NIKO-SEM

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PB5G8JW Dual N-Channel Enhancement Mode Field Effect Transistor by NIKO-SEM - Datasheet Preview — Datasheet preview – PB5G8JW

Datasheet Details

Part number	PB5G8JW
Manufacturer	NIKO-SEM
File Size	230.15 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PB5G8JW Datasheet
Note	This datasheet PDF includes multiple part numbers: PB5G8JW, PB5G8JW-NIKO. Please refer to the document for exact specifications by model.
Additional preview pages of the PB5G8JW datasheet.

Product details

Features

Pb.
Free, Halogen Free and RoHS compliant.
Low RDS(on) to Minimize Conduction Losses.
Ohmic Region Good RDS(on) Ratio.
Optimized Gate Charge to Minimize Switching Losses.
Products Integrated ESD diode with ESD Protected up to 2KV.

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Published: Dec 2, 2024 |