The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P8010BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID 15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1 Avalanche Current
TC = 25 °C TC = 100 °C
VGS
ID
IDM IAS
±20 15 9 35 12
Avalanche Energy
L =0.1mH
EAS
7.2
MOSFET dV/dt Ruggedness Peak Diode Recovery dV/dt2 Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C TC = 100 °C
dV/dt
PD TJ, Tstg
16.2 4.1 46 18 -55 to 150
UNITS V V
A
mJ V/nS
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature.
P8010BD Datasheet
