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P8010BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
100V
85mΩ @VGS = 10V
17A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
17 10
IDM
35
Avalanche Current Avalanche Energy2
IAS
13
EAS
8.5
Power Dissipation
TC = 25 °C TC = 100 °C
PD
54 21
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Starting Tj = 25 °C,L=0.1mH,VDD= 50V
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 2.3 °C / W 62.
P8010BT Datasheet
