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P0470ETFS - N-Channel MOSFET

Download the P0470ETFS datasheet PDF. This datasheet also covers the P0470ETF variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P0470ETF-UNIKC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P0470ETFS
Manufacturer UNIKC
File Size 827.35 KB
Description N-Channel MOSFET
Datasheet download datasheet P0470ETFS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P0470ETF / P0470ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 700V 2.8Ω @VGS = 10V 4A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 4 2.6 IDM 16 IAS 2 EAS 20 Power Dissipation TC = 25 °C PD 54 TC = 100 °C 22 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C.