P046BTFS - N-Channel MOSFET

UNIKC

Download the P046BTFS datasheet PDF. This datasheet also covers the P0460BTF variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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P046BTFS n-channel mosfet by UNIKC - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P0460BTF-UNIKC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P046BTFS
Manufacturer	UNIKC
File Size	387.88 KB
Description	N-Channel MOSFET
Datasheet	P046BTFS Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
P0460ETFA	N-Channel MOSFET	NIKO-SEM
P0460ETFAS	N-Channel MOSFET	NIKO-SEM
P0465CD	N-Channel Transistor	NIKO-SEM
P0465CTF	N-Channel MOSFET	NIKO-SEM
P0465CTFS	N-Channel MOSFET	NIKO-SEM

Other Datasheets by UNIKC

Part Number	Description
P0460AD	N-Channel Transistor
P0460AI	N-Channel MOSFET
P0460AS	N-Channel MOSFET
P0460AT	N-Channel MOSFET
P0460ATF	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P0460BTF / P046BTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 2.6Ω @VGS = 10V 4A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 4 1.5 IDM 16 Avalanche Current IAS 4 Avalanche Energy L = 10mH EAS 81 Power Dissipation TC = 25 °C PD 25 TC = 100 °C 10 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package.