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P0460AS / P0460AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2Ω @VGS = 10V
ID 4A
TO-263
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
L = 10mH
ID
IDM IAS EAS
4 2.5 20 4 80
Power DissipationA
TC = 25 °C TC = 100 °C
PD
75 48
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
P0460AS Datasheet
