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P0460CTF-P
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
600V
2.7Ω @VGS = 10V
4A
TO-220F
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain Current2
Pulsed Drain Current1 , 2 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
4 2.4
IDM
15
IAS
2
EAS
20
Power Dissipation
TC = 25 °C
PD
24
TC = 100 °C
9.8
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
P0460CTF-P Datasheet
