P0403BD Datasheet - UNIKC

P0403BD MOSFET

P0403BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.3mΩ @VGS = 10V ID 81A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 81 51 200 Avalanche Current IAS 66 Avalanche Energy L = 0.1mH EAS 220 Power Dissipation TC = 25 °C TC = 100 °C PD 51 20 Operat.

P0403BD Datasheet (415.54 KB)