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P0403BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.5mΩ @VGS = 10V
ID 18A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
18 15 70
Avalanche Current
IAS 42
Avalanche Energy
L = 0.1mH
EAS
87
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.5 1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
Lead Temperature( 1/16" from case for 10 sec)
TL 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P0403BV Datasheet
