QM6001D - P-Ch 60V Fast Switching MOSFETs

Description

The QM6001D is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Features

z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS -60V RDSON 110mΩ ID -11.5A.

UBIQ

📥 Download Datasheet

Datasheet Details

Part number	QM6001D
Manufacturer	UBIQ
File Size	313.33 KB
Description	P-Ch 60V Fast Switching MOSFETs
Datasheet	QM6001D Datasheet
Additional preview pages of the QM6001D datasheet.

📁 Similar Datasheet

QM6008G - N-Channel 60V MOSFET (VBsemi)
QM6008K - N-Channel 60V MOSFET (VBsemi)
QM600HD-M - Transistor (Mitsubishi Electric Semiconductor)

Other Datasheets by UBIQ

QM6003F - P-Ch 60V Fast Switching MOSFETs
QM6003S - P-Ch 60V Fast Switching MOSFETs
QM6004D - N-Ch 60V Fast Switching MOSFETs
QM6004F - N-Ch 60V Fast Switching MOSFETs
QM6004P - N-Ch 60V Fast Switching MOSFETs
QM6004S - N-Ch 60V Fast Switching MOSFETs
QM6006B - N-Ch 60V Fast Switching MOSFETs
QM6006D - N-Ch 60V Fast Switching MOSFETs

Full PDF Text Transcription

Click to expand full text

QM6001D P-Ch 60V Fast Switching MOSFETs General Description The QM6001D is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6001D meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS -60V RDSON 110mΩ ID -11.

Published: Jan 1, 2016 |