Datasheet4U Logo Datasheet4U.com

QM6006B - N-Ch 60V Fast Switching MOSFETs

Description

The QM6006B is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available QM6006B N-Ch 60V Fast Switching MOSFETs Product Summery BVDSS 60V RDSON 18mΩ ID 45A.

📥 Download Datasheet

Datasheet Details

Part number QM6006B
Manufacturer UBIQ
File Size 299.45 KB
Description N-Ch 60V Fast Switching MOSFETs
Datasheet download datasheet QM6006B Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
QM6008G N-Channel 60V MOSFET VBsemi
QM6008K N-Channel 60V MOSFET VBsemi
QM600HD-M Transistor Mitsubishi Electric Semiconductor

Other Datasheets by UBIQ

Part Number Description
QM6006D N-Ch 60V Fast Switching MOSFETs
QM6006F N-Ch 60V Fast Switching MOSFETs
QM6006M6 N-Ch 60V Fast Switching MOSFETs
QM6006P N-Ch 60V Fast Switching MOSFETs
QM6006S N-Ch 60V Fast Switching MOSFETs

Full PDF Text Transcription

Click to expand full text
General Description The QM6006B is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6006B meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Published: |