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PH1214-80M Datasheet Preview

PH1214-80M Datasheet

Radar Pulsed Power Transistor - 80 Watts/ 1.20-1.40 GHz/ 150ms Pulse/ 10% Duty

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Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty
PH1P2H11421-48-080MM
Radar Pulsed Power Transistor - 80 Watts,
1.20-1.40 GHz, 150µs Pulse, 10% Duty
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing1
Description
M/A-COM’s PH1214-80M is a silicon bipolar NPN power
transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed
radars such as air traffic control and long-range weather radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1214-80M can produce 80 watts of output
power with medium pulse length (150 µS) at 10 percent duty
cycle. The transistor is housed in a 2-lead, rectangular metal-
ceramic flange package, with internal input and output
impedance matching networks. Dissued emitter ballast resistors
and gold metalization assure ruggedness and long-term reliabil-
ity. In addition to L-band pulsed radars, this high performance
power transistor can also be used in pulsed digital communica-
tions systems.
Absolute Maximum Rating at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +25°C
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
PTOT
Tstg
Tj
Rating
70
3.0
6.4
185
-65 to +200
200
Units
V
V
A
W
°C
°C
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Broadband Test Fixture Impedance
F (GHz)
1.20
Z IF ()
9.4 - j4.5
Z OF ()
7.0 - j2.8
1.30
8.3 - j2.8
4.5 - j3.2
1.40
7.9 - j1.3
3.0 - j2.1
TEST FIXTURE
INPUT
CIRCUIT
TEST FIXTURE
OUTPUT
CIRCUIT
50ZIF
ZOF 50
Electrical Specifications at 25°C
Symbol
BVCES
ICES
RTH(JC)
PO
GP
η
RL
VSWR-T
VSWR-S
Parameter
Collector-Emitter Breakdown
Collector-Emitter Breakdown
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Test Conditions
IC = 35 mA
VCE = 40 V
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
Min Max Units
70 - V
- 3.5 mA
- 0.80 °C/W
80 W
7.5 - dB
50 - %
9 - dB
- 3:1 -
- 1.5:1 -
V2.00
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.




Tyco Electronics

PH1214-80M Datasheet Preview

PH1214-80M Datasheet

Radar Pulsed Power Transistor - 80 Watts/ 1.20-1.40 GHz/ 150ms Pulse/ 10% Duty

No Preview Available !

Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty
PH1214-80M
Test Fixture Electrical Schematic1
Top View
Electrical Schematic Parts List
C1, C2 100 pF ATC size A
C3 50 uF 50 Volts
Q1 PH1214-80M
Board Type Rogers 6010.5 .025Thick, ER = 10.5
Note:
1. Dimensions are in mils.
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00


Part Number PH1214-80M
Description Radar Pulsed Power Transistor - 80 Watts/ 1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
Maker Tyco Electronics
Total Page 2 Pages
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