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Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty PH1214-4M 1.2 - 1.4 GHz
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
f
_ .137* 919 ~ (3.~8S.25) I 1
.004=.001 (.10+.03)
UNLESS
O-HERW:SE
NOTED.
TLERANCES
ARE
INCHES (M!LL,METERS
=.005' ~,13MM)
Electrical Characteristics
Parameter
at 25°C
Symbol Min Max Units Test Conditions
Collector-Emitter Collector-Emitter
Breakdown Voltage Leakage Current
BV,,, ICES R THUCI P OUT G. I sic RL VSWR-T VSWR-S I
65
1.0 8.
PH1214-4M Datasheet
