FDMA905 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -12V,ID = -6.7A RDS(ON) < 27mΩ @ VGS=-2.5V RDS(ON) < 21mΩ @ VGS=-4.5V
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* Advanced trench MOSFET process technology
* Ultra lo.
General Features
* VDS = -12V,ID = -6.7A RDS(ON) < 27mΩ @ VGS=-2.5V RDS(ON) < 21mΩ @ VGS=-4.5V
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S Schematic dia.
The FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.
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