* Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A
* Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A
* Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A
* L.

It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offe.

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package off.

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