* 650V @TJ = 150 ℃
* Typ. RDS(on) = 0.77Ω
* Ultra Low Gate Charge (typ. Qg = 15nC)
* 100% avalanche tested
* Rohs Compliant Absolute Maximum Ratings .

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,.

TSD5N60M

TSD5N65M

TSD5N50M

TSD5N50MR

TSD50R550S1

TSD515

TSD57045

TSD57045-01

TSD57060

TSD57060-01

TSD-1251

TSD-515

TSD0033-728WT

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