- 3.0A, 600V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS .

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

TSD5N60S

TSD5N65M

TSD5N50M

TSD5N50MR

TSD50R550S1

TSD515

TSD57045

TSD57045-01

TSD57060

TSD57060-01

TSD-1251

TSD-515

TSD0033-728WT

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