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TGF2023-10 - 50 Watt Discrete Power GaN on SiC HEMT

Description

The TriQuint TGF2023-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz.

The TGF2023-10 is designed using TriQuint’s proven 0.25um GaN production process.

Features

  • Frequency Range: DC - 18 GHz 46.7 dBm Nominal Psat at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 1 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 2.48 x 0.10 mm Primary.

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Datasheet Details

Part number TGF2023-10
Manufacturer TriQuint Semiconductor
File Size 407.52 KB
Description 50 Watt Discrete Power GaN on SiC HEMT
Datasheet download datasheet TGF2023-10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal Psat at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 1 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 2.48 x 0.10 mm Primary Applications • • www.DataSheet.net/ Defense & Aerospace Broadband Wireless Product Description Bias conditions: Vd = 28 V, Idq = 1 A, Vg = -3.6 V Typical The TriQuint TGF2023-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-10 is designed using TriQuint’s proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.
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