TGF2023-02 hemt equivalent, 12 watt discrete power gan on sic hemt.
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Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 2.
Bias conditions: Vd = 28 V, Idq = 250 mA, Vg = -3.6 V Typical
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The TriQuint TGF2023-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-02 is designed using TriQuint’s proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave .
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