Datasheet Details
| Part number | T1G6000528-Q3 |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 1.62 MB |
| Description | GaN RF Power Transistor |
| Datasheet |
 T1G6000528-Q3 Datasheet
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Description
General Description The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz.
Features
- Frequency: DC to 6 GHz.
- Linear Gain: >10 dB at 6 GHz.
- Operating Voltage: 28 V.
- Output Power (P3dB): >7 W at 6 GHz.
- Lead-free and RoHS compliant.
- Low thermal resistance package Package Information Package Type Q3.