TP65H300G4LSG fet equivalent, gan fet.
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on) production tested
* Robust design, defined by
— Intrinsic lifetime tests — Wide gat.
* Datacom
* Broad industrial
* PV inverter
* Servo motor
Key Specifications
VDS (V) min V(TR)DSS (V) m.
The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device. It combines stateof-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
SuperGaN is Tra.
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