TP65H070L fet equivalent, 650v gan fet.
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
— Intrinsic lifetime tests — Wide gate safety margin — Tra.
* Datacom
* Broad industrial
* PV inverter
* Servo motor
Key Specifications
VDSS (V) V(TR)DSS (V) RDS(.
The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved .
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