Description
The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices.
offering superior reliability and performance.
AN0009: Recommended External Circuitry for GaN FETs
AN0003: Printed Circuit Board Layout and Probing
Features
- JEDEC qualified GaN technology.
- Dynamic RDS(on)eff production tested.
- Robust design, defined by.
- Intrinsic lifetime tests.
- Wide gate safety margin.
- Transient over-voltage capability.
- Very low QRR.
- Reduced crossover loss.
- RoHS compliant and Halogen-free packaging
Benefits.
- Improves efficiency/operation frequencies over Si.
- Enables AC-DC bridgeless totem-pole PFC designs.
- Increased power density.
- Reduced system s.
TP65H070L-Transphorm.pdf
