Datasheet Details
| Part number | TP65H070L |
|---|---|
| Manufacturer | Transphorm |
| File Size | 1.04 MB |
| Description | 650V GaN FET |
| Datasheet |
 TP65H070L Datasheet
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General Description
The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices.
offering superior reliability and performance.
Key Features
- JEDEC qualified GaN technology.
- Dynamic RDS(on)eff production tested.
- Robust design, defined by.
- Intrinsic lifetime tests.
- Wide gate safety margin.
- Transient over-voltage capability.
- Very low QRR.
- Reduced crossover loss.
- RoHS compliant and Halogen-free packaging Benefits.
- Improves efficiency/operation frequencies over Si.
- Enables AC-DC bridgeless totem-pole PFC designs.
- Increased power density.
- Reduced system s.