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TP65H070L Datasheet

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Features and Benefits


 JEDEC qualified GaN technology
 Dynamic RDS(on)eff production tested
 Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability
 Very low QRR
 Reduced crossover loss
 RoHS compliant and Halogen-free packaging Benefits
 Improves efficie.

TP65H070L TP65H070L TP65H070L
TAGS
650V
GaN
FET
TP65H070L
TP65H070LDG
TP65H070LSG
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