TP65H070L Datasheet | Transphorm

TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It bines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature - AN0009: Remended External Circuitry for GaN FETs - AN0003: Printed Circuit Board Layout and Probing - AN0010: Paralleling GaN FETs Ordering Information Part Number Package TP65H070LDG TP65H070LSG 8 x 8mm PQFN 8 x 8mm PQFN Package...