TC1301 fets equivalent, low noise and medium power gaas fets.
Low Noise Figure: NF = 0.8 dB Typical at 12 GHz www.DataSheet4U.com
* High Associated Gain: Ga = 10 dB Typical at 12 GHz
* High Dynamic Range: 1 dB Compression Po.
including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent qual.
The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium pow.
Image gallery
TAGS
Download (Size : 241.07KB)