TPCF8004 mosfet equivalent, silicon n-channel mosfet.
(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (V.
* Lithium-Ion Secondary Batteries
2. Features
(1) Small footprint due to a small and thin package (2) Low drain-sour.
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