TPCF8104 Datasheet - Toshiba Semiconductor

TPCF8104 MOSFET

www.DataSheet4U.com TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCF8104 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1mA) Unit: mm Absolu.

TPCF8104 Features

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TPCF8104_ToshibaSemiconductor.pdf