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TK8Q60W Datasheet - Toshiba Semiconductor

TK8Q60W Silicon N-Channel MOSFET

TK8Q60W Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heat Sink) 3: Source IPAK 4. Absolute

TK8Q60W Datasheet (301.31 KB)

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Datasheet Details

Part number:

TK8Q60W

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

301.31 KB

Description:

Silicon n-channel mosfet.

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TAGS

TK8Q60W Silicon N-Channel MOSFET Toshiba Semiconductor

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