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TK8Q65W - N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.55 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK8Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Not.

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Datasheet Details

Part number TK8Q65W
Manufacturer Toshiba
File Size 264.92 KB
Description N-Channel MOSFET
Datasheet download datasheet TK8Q65W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK8Q65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.55 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK8Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 7.8 A Drain current (pulsed) (Note 1) IDP 31.2 Power dissipation (Tc = 25) PD 80 W Single-pulse avalanche energy (Note 2) EAS 102 mJ Avalanche current IAR 1.