Datasheet4U Logo Datasheet4U.com

TK72A08N1 - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK72A08N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 80 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (N.

📥 Download Datasheet

Datasheet Details

Part number TK72A08N1
Manufacturer Toshiba
File Size 234.10 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK72A08N1 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK72A08N1 N-Channel MOSFET INCHANGE
TK72A12N1 N-Channel MOSFET INCHANGE
TK72E08N1 N-Channel MOSFET INCHANGE
TK72E12N1 N-Channel MOSFET INCHANGE
TK7.5A Current Transducer Topstek

Other Datasheets by Toshiba

Part Number Description
TK72A12N1 Silicon N-Channel MOSFET
TK72E08N1 Silicon N-Channel MOSFET
TK72E12N1 Silicon N-Channel MOSFET
TK70A06J1 N-Channel MOSFET
TK70D06J1 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-channel MOS (U-MOS-H) TK72A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK72A08N1 1: Gate 2: Drain 3: Source TO-220SIS 4.
Published: |