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TK70D06J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK70D06J1
Switching Regulator Application
• High-Speed switching • Small gate charge: Qg = 87 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) • Enhancement-mode: Vth = 1.1 to 2.