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TK58E06N1 Datasheet, Toshiba Semiconductor

TK58E06N1 mosfet equivalent, silicon n-channel mosfet.

TK58E06N1 Avg. rating / M : 1.0 rating-15

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TK58E06N1 Datasheet

Features and benefits

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V.

Application


* Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS.

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TK58E06N1 Page 1 TK58E06N1 Page 2 TK58E06N1 Page 3

TAGS

TK58E06N1
Silicon
N-Channel
MOSFET
TK58A06N1
TK50A04K3
TK50F15J1
Toshiba Semiconductor

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