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TK50J30D Datasheet, Toshiba Semiconductor

TK50J30D mosfet equivalent, silicon n-channel mosfet.

TK50J30D Avg. rating / M : 1.0 rating-12

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TK50J30D Datasheet

Features and benefits

(1) Low drain-source on-resistance: RDS(ON) = 0.04 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V.

Application


* Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.04 Ω (typ.) (2) Low leaka.

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TAGS

TK50J30D
Silicon
N-Channel
MOSFET
TK50J60U
TK50A04K3
TK50F15J1
Toshiba Semiconductor

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