TK50P04M1 mosfet equivalent, silicon n-channel mosfet.
(1) High-speed switching (2) Low gate charge: QSW = 9.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.7 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS =.
* Switching Voltage Regulators
* Motor Drivers
* Power Management Switches
2. Features
(1) High-speed switch.
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