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TK100E10N1 Datasheet, Toshiba Semiconductor

TK100E10N1 mosfet equivalent, silicon n-channel mosfet.

TK100E10N1 Avg. rating / M : 1.0 rating-124

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TK100E10N1 Datasheet

Features and benefits

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 .

Application


* Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS.

Image gallery

TK100E10N1 Page 1 TK100E10N1 Page 2 TK100E10N1 Page 3

TAGS

TK100E10N1
Silicon
N-Channel
MOSFET
Toshiba Semiconductor

Manufacturer


Toshiba (https://www.toshiba.com/) Semiconductor

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