logo

TK100E08N1 Datasheet, Toshiba Semiconductor

TK100E08N1 mosfet equivalent, silicon n-channel mosfet.

TK100E08N1 Avg. rating / M : 1.0 rating-112

datasheet Download (Size : 247.30KB)

TK100E08N1 Datasheet

Features and benefits

(1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V.

Application


* Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) .

Image gallery

TK100E08N1 Page 1 TK100E08N1 Page 2 TK100E08N1 Page 3

TAGS

TK100E08N1
Silicon
N-Channel
MOSFET
Toshiba Semiconductor

Manufacturer


Toshiba (https://www.toshiba.com/) Semiconductor

Related datasheet

TK100E06N1

TK100E10N1

TK100A06N1

TK100A08N1

TK100A10N1

TK100F04K3

TK100F04K3L

TK100F06K3

TK100L60W

TK100S04N1L

TK10415

TK10416

TK10417

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts