• Part: TH50VSF3582AASB
  • Description: MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
  • Manufacturer: Toshiba
  • Size: 611.07 KB
Download TH50VSF3582AASB Datasheet PDF
Toshiba
TH50VSF3582AASB
TH50VSF3582AASB is MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS manufactured by Toshiba.
TH50VSF3582/3583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. The TH50VSF3582/3583AASB can range from 2.67 V to 3.3 V. The TH50VSF3582/3583AASB is available in a 69-pin BGA package, making it suitable for a variety of design applications. Features Power supply voltage...