TH50VSF3582AASB
Key Features
- Data retention supply voltage VCCs = 1.5 V~3.3 V
- Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH)
- Block erase architecture for flash memory 8 × 8 Kbytes 63 × 64 Kbytes
- Organization
- PIN ASSIGNMENT (TOP VIEW)
