TC59LM906AMG-37 datasheet, monolithic equivalent, Toshiba Semiconductor

TC59LM906AMG-37 monolithic equivalent, mos digital integrated circuit silicon monolithic.

Features and benefits

PARAMETER CL = 3 tCK Clock Cycle Time (min) CL = 4 CL = 5 tRC Random Read/Write Cycle Time (min) tRAC Random Access Time (max) IDD1S Operating Current (single bank) (max).

Application

where large memory density and low power consumption are required. The Output Driver for Network FCRAMTM is capable of h.

Description

Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG is Fast Cycle Random Access Memory (Network FCRAMTM) containing 536,870,912 memory cells. TC59LM914AMG is organized as 4,194,304-words × 8 banks × 16 bits, TC59LM906.

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