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SSM6L807R Datasheet, Toshiba Semiconductor

SSM6L807R mosfet equivalent, silicon dual-channel mosfet.

SSM6L807R Avg. rating / M : 1.0 rating-11

datasheet Download

SSM6L807R Datasheet

Features and benefits

(1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-cha.

Application


* Power Management Switches 2. Features (1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@V.

Image gallery

SSM6L807R Page 1 SSM6L807R Page 2 SSM6L807R Page 3

TAGS
SSM6L807R
Silicon
Dual-Channel
MOSFET
SSM6L820R
SSM6L05FU
SSM6L09FU
Toshiba Semiconductor
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