SSM6L807R mosfet equivalent, silicon dual-channel mosfet.
(1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-cha.
* Power Management Switches
2. Features
(1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@V.
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