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SSM6L61NU - Silicon Dual-Channel MOSFET

Features

  • (1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) Q2 P-channel: RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) 3. Packaging and Internal Circuit UDFN6 SSM6L61NU 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2016 Toshiba Corporation 1 Start of commercial produ.

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Datasheet Details

Part number SSM6L61NU
Manufacturer Toshiba
File Size 426.26 KB
Description Silicon Dual-Channel MOSFET
Datasheet download datasheet SSM6L61NU Datasheet

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Full PDF Text Transcription

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MOSFETs Silicon P-/N-Channel MOS SSM6L61NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) Q2 P-channel: RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) 3. Packaging and Internal Circuit UDFN6 SSM6L61NU 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 2016-04-14 Rev.2.0 SSM6L61NU 4. Absolute Maximum Ratings (Note) 4.1.
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