SSM6L56FE mosfet equivalent, silicon dual-channel mosfet.
(1) 1.5-V drive (2) Low drain-source on-resistance
Q1 N-channel: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS.
* High-Speed Switching
2. Features
(1) 1.5-V drive (2) Low drain-source on-resistance
Q1 N-channel: RDS(ON) = 235 mΩ.
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