SSM6L56FE mosfet equivalent, silicon dual-channel mosfet.
(1) 1.5-V drive (2) Low drain-source on-resistance
Q1 N-channel: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS.
* High-Speed Switching
2. Features
(1) 1.5-V drive (2) Low drain-source on-resistance
Q1 N-channel: RDS(ON) = 235 mΩ.
Image gallery
TAGS
Download (Size : 373.47KB)