SSM6K504NU mosfet equivalent, silicon n-channel mosfet.
(1) AEC-Q101 qualified (Note 1) (2) 4.5 V gate drive voltage. (3) Low drain-source on-resistance
: RDS(ON) = 26 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 19.5 mΩ (max) (@VGS = 10.
* High-Speed Switching
2. Features
(1) AEC-Q101 qualified (Note 1) (2) 4.5 V gate drive voltage. (3) Low drain-sourc.
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