K3567
Key Features
- Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
- 400 V, VGS = 10 V, ID = 3.5 A Duty < = 1%, tw = 10 μs Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton 10 V VGS 0V 50 Ω ID = 1.8 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1.8 A VDS = 10 V, ID = 1.8 A Min ⎯ ±30 ⎯ 600 2.0 ⎯ 0.7 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.7 2.5 550 6 60 12 45 13 80 16 10 6 Max ±10 ⎯ 100 ⎯ 4.0 2.2 ⎯ ⎯ ⎯ pF Unit μA V μA V V Ω S
