Datasheet Details
| Part number |
K3566
|
| Manufacturer |
Toshiba |
| File Size |
209.56 KB |
| Description |
Silicon N-Channel MOSFET |
| Datasheet |
 K3566 Datasheet
|
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Full PDF Text Transcription for K3566 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3566. For precise diagrams, and layout, please refer to the original PDF.
2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (...
View more extracted text
ator Applications • Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.
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