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K10A60W Datasheet, Toshiba Semiconductor

K10A60W mosfet equivalent, silicon n-channel mosfet.

K10A60W Avg. rating / M : 2.0 rating-2rating-296

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K10A60W Datasheet

Features and benefits

(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2..

Application


* Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to S.

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K10A60W Page 1 K10A60W Page 2 K10A60W Page 3

TAGS

K10A60W
Silicon
N-Channel
MOSFET
K10A60D
K10A60DR
K10A50D
Toshiba Semiconductor

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