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TK10A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK10A60D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) • High forward transfer admittance: |Yfs| = 6.0S (typ.) • Low leakage current: IDSS = 10 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.
K10A60D Datasheet
