JDV2S16FS Datasheet | Toshiba

TOSHIBA Diode Silicon Epitaxial Planar Type .. VCO for the UHF band - - - High capacitance ratio: C1V/C4V = 2.0 (typ.) Low series resistance: rs = 0.55 Ω (typ.) This device is suitable for use in a small-size tuner. ｶｿｰﾄﾞﾏｰｸ Unit: mm 0.6±0.05 0.1 0.8±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 - 55~150 Unit V °C °C 0.2 ±0.05 0.1±0.05 0.48 +0.02 -0.03 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC JEITA TOSHIBA ― ― 1-1L1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs IR = 1 μA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Test Condition Min 10 ⎯ 3.38 1.67 1.9 ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 0.55 Max ⎯ 3 3.8 1.9 2.1 0.7 Unit V n A p F ⎯ Ω Note: Signal level when capacitance is measured: Vsig = 100 m Vrms Marking 2007-11-01 1.0±0.05 .. RESTRICTIONS ON PRODUCT USE - The information contained herein is subject to change without notice. 20070701-EN GENERAL - TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress....