GT10G131 Datasheet, Toshiba Semiconductor

GT10G131 igbt equivalent, silicon n-channel igbt.

GT10G131

Avg. rating / M : 1.0 rating-1

9

datasheet Download (Size : 245.60KB)

GT10G131 Datasheet

Application

Unit: mm
* 5th generation (trench gate structure) IGBT
* Enhancement-mode
* 4-V gate drive voltage: VGE = .

Image gallery

TAGS

Toshiba Semiconductor

Manufacturer

Toshiba (https://www.toshiba.com/) Semiconductor

Related datasheet

Since 2006. D4U Semicon. | Contact Us | Privacy Policy | Purchase of parts